M28C16 |
RFQ for M28C16 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| M28C16 | - | DIP | N/A |
The M28C16 is a 2K x 8 low power Parallel EEPROMfabricatedwithSGS-THOMSONproprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible microcontroller interface featuring both hardware and software handshakingwith Data Polling andToggle Bit. The M28C16 supports 64 byte page write operation. A Software Data Protection (SDP) is also possible using the standard JEDEC algorithm.
Features |
| `FAST ACCESS TIME: 90ns`SINGLE 5V ± 10% SUPPLY VOLTAGE`LOW POWERCONSUMPTION`FASTWRITE CYCLE: 64 Bytes Page Write Operation Byte or PageWrite Cycle: 3ms Max`ENHANCED END OF WRITE DETECTION: Data Polling Toggle Bit`PAGE LOAD TIMER STATUS BIT`HIGH RELIABILITY SINGLE POLYSILICON, CMOS TECHNOLOGY: Endurance >100,000 Erase/Write Cycles Data Retention >40 Years`JEDEC APPROVEDBYTEWIDE PIN OUT`SOFTWARE DATA PROTECTION`M28C16 is replacedby the products described on the document M28C16A |
|
Symbol |
Parameter |
Value |
Unit |
| TA | Ambient Operating Temperature |
40 to 125 |
|
| TSTG | Storage Temperature |
65 to 150 |
|
| VCC | Supply Voltage |
-0.3 to 6.5 |
V |
| VIO | Input/Output Voltage |
0.3 to VCC +0.6 |
V |
| VI | Input Voltage |
0.3 to 6.5 |
V |
| VESD | Electrostatic Discharge Voltage (Human Body model) (3) |
4000 |
V |
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. 100pF through 1500W; MIL-STD-883C, 3015.7
